ISL9R18120G2【PDF 1/9 页】DIODE STEALTH 1200V 18A TO247-2

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Sheet目录134

[1页]2页 3页 4页 5页

Rev.

-55 to 175 °C

ISL9R18120G2

ISL9R18120P2

SL9R18120S3S

— STEALTH? Diode

ISL9R18120G2,

ISL9R1

8120P2,

Applications

Hard Switched PFC Boost Diode

UPS Free Wheeling Diode

Motor Drive FWD

SMPS FWD

Snubber Diode

Device Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Rating Unit

VRRM

Repetitive Peak Reverse Voltage

1200 V

VRWM

Working Peak Reverse Voltage

1200 V

DC Blocking Voltage

1200 V

IF(AV)

Average Rectified Forward Current (TC

= 92

oC)

IFRM

Repetitive Peak Surge Current (20kHz Square Wave)

IFSM

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

200

Power Dissipation

125

EAVL

Avalanche Energy (1A, 40mH)

TJ, TSTG

Operating and Storage Temperature Range

TPKG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Application Note AN-7528

300

260

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

JEDEC TO-220AC

ANODE

CATHODE

JEDEC TO-263AB

CATHODE

(FLANGE)

N / C

2 LEAD

TO-247

ANODE

CATHODE

(BOTTOM SIDE

METAL)

ANODE

CATHODE

(FLANGE)

Package

Symbol

Stealth Recovery trr

= 300 ns (@ IF

= 18 A)

? Max Forward Voltage, VF

= 3.3 V (@ T

= 25°C)

1200

V Reverse Voltage and High Reliability

? Avalanche Energy Rated

? RoHS Compliant

ISL9R18120S3S

A, 1200

V, STEALTH? Diode

Features

The ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S

is a

STEALTH? diode optimized for low loss performance in high

frequency hard switched applications. The STEALTH? family

exhibits low reverse recovery current (IRR) and exceptionally soft

recovery under typical operating conditions. This device is

intended for use as

a free wheeling or boost diode in power

supplies and other power switching applications. The low

IRR

and short ta phase reduce loss

in switching transistors. The

soft recovery minimizes

ringing, expanding the range of

conditions under which the diode may be operated without the

use of additional snubber circuitry. Consider using the

STEALTH? diode with an SMPS IGBT to provide the most

efficient and highest power density design at lower cost.

?2002

Fairchild

Semiconductor Corporation

ISL9R18120G2, ISL9R18120P2,

ISL9R18120S3S

www.fairchildsemi.com

Description

February

2014

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